Requirements to Achieve Field-induced Anodisation for Silicon Surface Passivation

Surface Passivation Study on Gettered Multicrystalline Silicon

In this study the electronic quality of multicrystalline silicon material in the as grown state and after various POCl3 diffusion steps is analyzed. For this purpose two different surface passivations (quinhydrone-methanol and a-Si:H) are tested and also their reproducibility is checked. It is found that the chemical passivation using quinhydrone-methanol is more complicated to apply for detect...

Surface passivation of black silicon phosphorus emitters

ii Abstract (in Finnish) iiiin Finnish) iii

Solution-processed amorphous silicon surface passivation layers

Amorphous silicon thin films, fabricated by thermal conversion of neopentasilane, were used to passivate crystalline silicon surfaces. The conversion is investigated using X-ray and constant-final-state-yield photoelectron spectroscopy, and minority charge carrier lifetime spectroscopy. Liquid processed amorphous silicon exhibits high Urbach energies from 90 to 120 meV and 200 meV lower optical...

Asymmetric anodisation of silicon for biological and photonic applications

Comparison of Dielectric Surface Passivation of Monocrystalline and Multicrystalline Silicon

Reducing solar cell thickness is an attractive way to reduce material costs. However, model calculations in this paper show that if rear surface recombination velocity (S) is greater than about 1000 cm/s, a 100-μm-thick screen-printed cell on solar-grade material has a lower efficiency than a 300-μm-thick cell. The literature demonstrates that S < 1000 cm/s is readily achievable on monocrystall...